Invention Grant
- Patent Title: Strained semiconductor by full wafer bonding
-
Application No.: US11475798Application Date: 2006-06-27
-
Publication No.: US07994595B2Publication Date: 2011-08-09
- Inventor: Leonard Forbes , Joseph E. Geusic , Salman Akram
- Applicant: Leonard Forbes , Joseph E. Geusic , Salman Akram
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/32

Abstract:
One aspect of this disclosure relates to a method for forming a wafer with a strained semiconductor. In various embodiments of the method, a predetermined contour is formed in one of a semiconductor membrane and a substrate wafer. The semiconductor membrane is bonded to the substrate wafer and the predetermined contour is straightened to induce a predetermined strain in the semiconductor membrane. In various embodiments, a substrate wafer is flexed into a flexed position, a portion of the substrate wafer is bonded to a semiconductor layer when the substrate wafer is in the flexed position, and the substrate wafer is relaxed to induce a predetermined strain in the semiconductor layer. Other aspects and embodiments are provided herein.
Public/Granted literature
- US20060244105A1 Strained semiconductor by full wafer bonding Public/Granted day:2006-11-02
Information query
IPC分类: