Invention Grant
- Patent Title: Shielding for integrated capacitors
- Patent Title (中): 集成电容器屏蔽
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Application No.: US12276289Application Date: 2008-11-21
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Publication No.: US07994609B2Publication Date: 2011-08-09
- Inventor: Patrick J. Quinn
- Applicant: Patrick J. Quinn
- Applicant Address: US CA San Jose
- Assignee: Xilinx, Inc.
- Current Assignee: Xilinx, Inc.
- Current Assignee Address: US CA San Jose
- Agent Scott Hewett; John J. King
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
A capacitor in an integrated circuit (“IC”) includes a core capacitor portion having first conductive elements electrically connected to and forming a part of a first node of the capacitor formed in a first layer and second conductive elements electrically connected to and forming a part of a second node of the capacitor formed in the first layer. The first and second conductive elements alternate in the first conductive layer. Third conductive elements electrically connected to and forming a part of the first node are formed in a second layer adjacent to the first layer. The capacitor also includes a shield capacitor portion having fourth conductive elements formed in at least first, second, third, and fourth layers. The shield capacitor portion is electrically connected to and forms a part of the second node of the capacitor and surrounds the first and third conductive elements.
Public/Granted literature
- US20100127347A1 SHIELDING FOR INTEGRATED CAPACITORS Public/Granted day:2010-05-27
Information query
IPC分类: