Invention Grant
US07994614B2 Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
有权
半导体晶片,半导体器件以及半导体器件的制造方法
- Patent Title: Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device
- Patent Title (中): 半导体晶片,半导体器件以及半导体器件的制造方法
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Application No.: US12382540Application Date: 2009-03-18
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Publication No.: US07994614B2Publication Date: 2011-08-09
- Inventor: Kouji Tanaka , Seiya Isozaki
- Applicant: Kouji Tanaka , Seiya Isozaki
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn Intellectual Property Law Group, PLLC
- Priority: JP2008-085576 20080328
- Main IPC: H01L29/06
- IPC: H01L29/06

Abstract:
Provided is a semiconductor wafer with a scribe line region and a plurality of element forming regions partitioned by the scribe line region, the semiconductor wafer including: conductive patterns formed in the scribe line region; and an island-shaped passivation film formed above at least a conductive pattern, which is or may be exposed to a side surface of a semiconductor chip obtained by dicing the semiconductor wafer along the scribe line region, among the conductive patterns, so that the island-shaped passivation film is opposed to the conductive pattern.
Public/Granted literature
- US20090243044A1 Semiconductor wafer, semiconductor device, and method of manufacturing semiconductor device Public/Granted day:2009-10-01
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