Invention Grant
- Patent Title: Direct contact leadless package for high current devices
- Patent Title (中): 直接接触无铅封装,适用于大电流器件
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Application No.: US12583991Application Date: 2009-08-28
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Publication No.: US07994615B2Publication Date: 2011-08-09
- Inventor: Eung San Cho
- Applicant: Eung San Cho
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/34

Abstract:
Some exemplary embodiments of a direct contact leadless package and related structure and method, especially suitable for packaging high current semiconductor devices, have been disclosed. One exemplary structure comprises a first contact lead frame portion, a paddle portion, and an extended contact lead frame portion held together by a mold compound. A first semiconductor device is attached to a top side of the paddle portion and is enclosed by said mold compound, while a second semiconductor device is attached to a bottom side of said paddle portion and is in electrical contact with said the first semiconductor device. The extended contact lead frame portion is in direct electrical contact with the second semiconductor device without using a bond wire. Alternative exemplary embodiments may include additional extended lead frame portions, paddle portions, and semiconductor devices in various configurations.
Public/Granted literature
- US20110049690A1 Direct contract leadless package for high current devices Public/Granted day:2011-03-03
Information query
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