Invention Grant
- Patent Title: Power transistor package with integrated bus bar
- Patent Title (中): 功率晶体管封装带集成母线
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Application No.: US12367719Application Date: 2009-02-09
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Publication No.: US07994630B2Publication Date: 2011-08-09
- Inventor: Cynthia Blair , Donald Fowlkes
- Applicant: Cynthia Blair , Donald Fowlkes
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Coats & Bennett, P.L.L.C.
- Main IPC: H01L23/48
- IPC: H01L23/48

Abstract:
According to one embodiment, a power transistor package includes an electrically conductive flange configured to be connected to a source of a power transistor device. The package further includes a first terminal mechanically fastened to the flange and configured to be electrically connected to a gate of the power transistor device and a second terminal mechanically fastened to the flange and configured to be electrically connected to a drain of the power transistor device. The package also includes a bus bar mechanically fastened to the flange which extends between and connects at least two different DC bias terminals mechanically fastened to the flange. The bus bar is configured to be electrically connected to the drain via one or more RF grounded connections.
Public/Granted literature
- US20100200979A1 Power Transistor Package with Integrated Bus Bar Public/Granted day:2010-08-12
Information query
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