Invention Grant
- Patent Title: Semiconductor element and semiconductor element fabrication method
- Patent Title (中): 半导体元件和半导体元件制造方法
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Application No.: US12408829Application Date: 2009-03-23
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Publication No.: US07994634B2Publication Date: 2011-08-09
- Inventor: Takeshi Kita , Kazushi Higashi
- Applicant: Takeshi Kita , Kazushi Higashi
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2008-077665 20080325; JP2009-051187 20090304
- Main IPC: H01L23/48
- IPC: H01L23/48
Abstract:
A semiconductor element is provided that includes a semiconductor substrate, a circuit element disposed on the substrate, and a through-hole formed in the substrate having a stripe-like concavo-convex structure on its sidewall with stripes formed in the direction of the thickness of the semiconductor substrate.
Public/Granted literature
- US20090243120A1 SEMICONDUCTOR ELEMENT AND SEMICONDUCTOR ELEMENT FABRICATION METHOD Public/Granted day:2009-10-01
Information query
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