Invention Grant
- Patent Title: Calibrated S-parameter measurements of a high impedance probe
- Patent Title (中): 高阻抗探头的校准S参数测量
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Application No.: US12117461Application Date: 2008-05-08
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Publication No.: US07994801B2Publication Date: 2011-08-09
- Inventor: William A. Hagerup , Laudie Doubrava
- Applicant: William A. Hagerup , Laudie Doubrava
- Applicant Address: US OR Beaverton
- Assignee: Tektronix, Inc.
- Current Assignee: Tektronix, Inc.
- Current Assignee Address: US OR Beaverton
- Agent Thomas F. Lenihan
- Main IPC: G01R35/00
- IPC: G01R35/00 ; G01D18/00

Abstract:
A new methodology for the measurement of the S-parameters of a high impedance probe allows obtaining a full two port S-parameter set for the high impedance probe. The measured probe S-parameters are then used for characterization of probes. An alternative method characterizes half of the fixture and termination as a one-port network and expanding it into a two-port error box. The two-port error box is then cascaded with the probe input.
Public/Granted literature
- US20080278176A1 CALIBRATED S-PARAMETER MEASUREMENTS OF A HIGH IMPEDANCE PROBE Public/Granted day:2008-11-13
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