Invention Grant
US07994833B2 Delay locked loop for high speed semiconductor memory device 有权
延迟锁定环路用于高速半导体存储器件

  • Patent Title: Delay locked loop for high speed semiconductor memory device
  • Patent Title (中): 延迟锁定环路用于高速半导体存储器件
  • Application No.: US12631611
    Application Date: 2009-12-04
  • Publication No.: US07994833B2
    Publication Date: 2011-08-09
  • Inventor: Beom-Ju Shin
  • Applicant: Beom-Ju Shin
  • Applicant Address: KR Gyeonggi-do
  • Assignee: Hynix Semiconductor Inc.
  • Current Assignee: Hynix Semiconductor Inc.
  • Current Assignee Address: KR Gyeonggi-do
  • Agency: IP & T Group LLP
  • Priority: KR10-2005-0090842 20050928; KR10-2006-0056408 20060622
  • Main IPC: H03L7/06
  • IPC: H03L7/06
Delay locked loop for high speed semiconductor memory device
Abstract:
A semiconductor device comprises a delay locked loop (DLL) configured to control a phase delay of an internal clock to output first and second DLL clocks; an output enable unit configured to generate rising/falling data output enable signals in response to the second DLL clocks; and an output driver configured to output data in response to one of the first DLL clocks selected by the rising/falling data output enable signals, where a phase of the second DLL clock leads that of the first DLL clock.
Public/Granted literature
Information query
Patent Agency Ranking
0/0