Invention Grant
- Patent Title: Delay locked loop for high speed semiconductor memory device
- Patent Title (中): 延迟锁定环路用于高速半导体存储器件
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Application No.: US12631611Application Date: 2009-12-04
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Publication No.: US07994833B2Publication Date: 2011-08-09
- Inventor: Beom-Ju Shin
- Applicant: Beom-Ju Shin
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2005-0090842 20050928; KR10-2006-0056408 20060622
- Main IPC: H03L7/06
- IPC: H03L7/06

Abstract:
A semiconductor device comprises a delay locked loop (DLL) configured to control a phase delay of an internal clock to output first and second DLL clocks; an output enable unit configured to generate rising/falling data output enable signals in response to the second DLL clocks; and an output driver configured to output data in response to one of the first DLL clocks selected by the rising/falling data output enable signals, where a phase of the second DLL clock leads that of the first DLL clock.
Public/Granted literature
- US20100073053A1 DELAY LOCKED LOOP FOR HIGH SPEED SEMICONDUCTOR MEMORY DEVICE Public/Granted day:2010-03-25
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