An electronic component for high frequency power amplification realizes an improvement in switching spectrum characteristics. The gain of an amplifying NMOS transistor is controlled by a bias voltage on which a bias control voltage is reflected. Further, a threshold voltage compensator compensates for a variation in threshold voltage with variations in the manufacture of the amplifying NMOS transistor. The threshold voltage compensator includes an NMOS transistor formed in the same process specification as the amplifying NMOS transistor and converts a variation in current flowing through the NMOS transistor depending on the variation in the threshold voltage of the amplifying NMOS transistor to its corresponding voltage by a resistor to compensate for the bias voltage. It is thus possible to reduce variations in so-called precharge level brought to fixed output power in a region (0 dBm or less, for example) low in output power.