Invention Grant
- Patent Title: High-frequency switch in multi-layer substrate
- Patent Title (中): 高频开关在多层基板上
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Application No.: US12860739Application Date: 2010-08-20
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Publication No.: US07994885B2Publication Date: 2011-08-09
- Inventor: Chang-Lin Wei , Ching-Liang Weng , Uei-Ming Jow , Ying-Jiunn Lai , Syun Yu , Chang-Sheng Chen
- Applicant: Chang-Lin Wei , Ching-Liang Weng , Uei-Ming Jow , Ying-Jiunn Lai , Syun Yu , Chang-Sheng Chen
- Applicant Address: TW Hsin-Chu
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW Hsin-Chu
- Agency: Stout, Uxa, Buyan & Mullins, LLP
- Priority: TW94103505A 20050204
- Main IPC: H01H51/22
- IPC: H01H51/22

Abstract:
A switch module consists of a build-up multi-layer structure and some passive devices. The build-up multi-layer structure has multitudes of conductive layers and dielectric layers laminated upon each another. At least one dielectric layer is interfered between any two conductive layers. Any one passive device is a portion of at least one conductive layer and electrically connects multitudes of conductive pads on the surface of the build-up multi-layer structure.
Public/Granted literature
- US20100314233A1 HIGH-FREQUENCY SWITCH IN MULTI-LAYER SUBSTRATE Public/Granted day:2010-12-16
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