Invention Grant
- Patent Title: Semiconductor device and a method of manufacturing the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US10932113Application Date: 2004-09-02
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Publication No.: US07995183B2Publication Date: 2011-08-09
- Inventor: Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
- Applicant: Shunpei Yamazaki , Jun Koyama , Yasuyuki Arai , Hideaki Kuwabara
- Applicant Address: JP Kanagawa-Ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Kanagawa-Ken
- Agency: Nixon Peabody LLP
- Agent Jeffrey L. Costellia
- Priority: JP2000-069563 20000313
- Main IPC: G02F1/1345
- IPC: G02F1/1345

Abstract:
A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
Public/Granted literature
- US20050041166A1 Semiconductor device and a method of manufacturing the same Public/Granted day:2005-02-24
Information query
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