Invention Grant
US07995183B2 Semiconductor device and a method of manufacturing the same 有权
半导体装置及其制造方法

Semiconductor device and a method of manufacturing the same
Abstract:
A pixel TFT formed in a pixel region is formed on a first substrate by a channel etch type reverse stagger type TFT, and patterning of a source region and a drain region, and patterning of a pixel electrode are performed by the same photomask. A driver circuit formed by using TFTs having a crystalline semiconductor layer, and an input-output terminal dependent on the driver circuit, are taken as one unit. A plurality of units are formed on a third substrate, and afterward the third substrate is partitioned into individual units, and the obtained stick drivers are mounted on the first substrate.
Public/Granted literature
Information query
Patent Agency Ranking
0/0