Invention Grant
US07995365B1 Method and apparatuses for managing double data rate in non-volatile memory
有权
用于在非易失性存储器中管理双倍数据速率的方法和装置
- Patent Title: Method and apparatuses for managing double data rate in non-volatile memory
- Patent Title (中): 用于在非易失性存储器中管理双倍数据速率的方法和装置
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Application No.: US12434600Application Date: 2009-05-01
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Publication No.: US07995365B1Publication Date: 2011-08-09
- Inventor: Elio D'Ambrosio , Ciro Chiacchio , Dionisio Minopoli
- Applicant: Elio D'Ambrosio , Ciro Chiacchio , Dionisio Minopoli
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Blakely, Sokoloff, Taylor & Zafman LLP
- Main IPC: G11C5/00
- IPC: G11C5/00 ; G11C7/00

Abstract:
Described herein are a method and apparatuses for providing DDR memory access. In one embodiment, an apparatus includes a data storage unit to store and synchronize a plurality of data line signals with a clock signal. The apparatus includes a selector unit that receives the plurality of data line signals and selects two data line signals. The apparatus also includes a double data rate (DDR) output unit that receives the two data line signals from the selector unit and generates a DDR data line signal having a time period substantially one half of a clock time period of the clock signal. The apparatus also includes an input/output (I/O) pad coupled to and locally positioned with respect to the DDR output unit. The data storage unit, the selector unit, and the DDR output unit in combination form an I/O buffer which is locally coupled to the I/O pad.
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