Invention Grant
- Patent Title: Semiconductor memory device, method of manufacturing the same, and method of screening the same
- Patent Title (中): 半导体存储器件及其制造方法及其筛选方法
-
Application No.: US12618122Application Date: 2009-11-13
-
Publication No.: US07995374B2Publication Date: 2011-08-09
- Inventor: Masanori Komura , Mitsuru Sato , Kenichi Murooka , Motoya Kishida
- Applicant: Masanori Komura , Mitsuru Sato , Kenichi Murooka , Motoya Kishida
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2009-070371 20090323
- Main IPC: G11C11/00
- IPC: G11C11/00 ; G11C11/36 ; G11C17/00 ; G11C29/00
Abstract:
A memory cell comprises a variable resistance film; a first conductive film having one surface contacted with one surface of the variable resistance film; and a second conductive film having one surface contacted with another surface of the variable resistance film. A width of the first conductive film or the second conductive film in a direction orthogonal to a direction that a current flows in the first conductive film or the second conductive film is smaller than a width of the variable resistance film in a direction orthogonal to a direction that a current flows in the variable resistance film. The width of the first conductive film and the second conductive film is smaller than a width of the first line and the second line in a direction orthogonal to a direction that a current flows in the first line and the second line.
Public/Granted literature
- US20100238704A1 SEMICONDUCTOR MEMORY DEVICE, METHOD OF MANUFACTURING THE SAME, AND METHOD OF SCREENING THE SAME Public/Granted day:2010-09-23
Information query
