Invention Grant
- Patent Title: MRAM device with shared source line
- Patent Title (中): 具有共享源线的MRAM设备
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Application No.: US11959515Application Date: 2007-12-19
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Publication No.: US07995378B2Publication Date: 2011-08-09
- Inventor: Sei Seung Yoon , Cheng Zhong , Dongkyu Park , Mohamed H. Abu-Rahma
- Applicant: Sei Seung Yoon , Cheng Zhong , Dongkyu Park , Mohamed H. Abu-Rahma
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Semion Talpalatsky
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
In a particular embodiment, a memory device includes a first memory cell and a second memory cell. The memory device also includes a first bit line associated with the first memory cell and a second bit line associated with the second memory cell. The memory device also includes a source line coupled to the first memory cell and coupled to the second memory cell.
Public/Granted literature
- US20090161413A1 MRAM Device with Shared Source Line Public/Granted day:2009-06-25
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