A semiconductor memory device includes a sense amplifier that compares intensities of currents flowing through a first node and a second node with each other, a first MOSFET having a drain terminal connected with the first node, a second MOSFET having a drain terminal connected with the second node, a memory cell connected with a source terminal of the first MOSFET, and a reference cell. The semiconductor memory device further includes a connection control circuit that connects a source terminal of the second MOSFET with the reference cell at the time of a regular operation and connects the source terminal of the second MOSFET with a reference voltage terminal at the time of a test operation.