Invention Grant
US07995383B2 Magnetic tunnel junction cell adapted to store multiple digital values
有权
适用于存储多个数字值的磁隧道结单元
- Patent Title: Magnetic tunnel junction cell adapted to store multiple digital values
- Patent Title (中): 适用于存储多个数字值的磁隧道结单元
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Application No.: US12973989Application Date: 2010-12-21
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Publication No.: US07995383B2Publication Date: 2011-08-09
- Inventor: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant: Xia Li , Seung H. Kang , Xiaochun Zhu
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Semion Talpalatsky
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
A particular magnetic tunnel junction (MTJ) cell includes a side wall defining a first magnetic domain adapted to store a first digital value. The MTJ cell also includes a bottom wall coupled to the side wall and defining a second magnetic domain adapted to store a second digital value.
Public/Granted literature
- US20110090732A1 Magnetic Tunnel Junction Cell Adapted to Store Multiple Digital Values Public/Granted day:2011-04-21
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