Invention Grant
US07995385B2 Memory array of pairs of nonvolatile memory cells using Fowler-Nordheim programming and erasing
有权
使用Fowler-Nordheim编程和擦除的非易失性存储器单元对的存储器阵列
- Patent Title: Memory array of pairs of nonvolatile memory cells using Fowler-Nordheim programming and erasing
- Patent Title (中): 使用Fowler-Nordheim编程和擦除的非易失性存储器单元对的存储器阵列
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Application No.: US11929761Application Date: 2007-10-30
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Publication No.: US07995385B2Publication Date: 2011-08-09
- Inventor: Hagop Nazarian , Michael Achter , Harry Kuo
- Applicant: Hagop Nazarian , Michael Achter , Harry Kuo
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Agency: Turocy & Watson, LLP
- Main IPC: G11C16/06
- IPC: G11C16/06
Abstract:
A system comprising a program component that programs one or more non-volatile memory (“NVM”) cells of an array of pairs of NVM cells using FN tunneling, an erase component that erases the one or more NVM cells of the array of pairs of NVM cells using FN tunneling, and a read component that reads the one or more NVM cells of the array of pairs of NVM cells.
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