Invention Grant
- Patent Title: Data storage using modified voltages
- Patent Title (中): 使用修改电压的数据存储
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Application No.: US12534898Application Date: 2009-08-04
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Publication No.: US07995388B1Publication Date: 2011-08-09
- Inventor: Shai Winter , Ofir Shalvi
- Applicant: Shai Winter , Ofir Shalvi
- Applicant Address: IL Herzliya Pituach
- Assignee: Anobit Technologies Ltd.
- Current Assignee: Anobit Technologies Ltd.
- Current Assignee Address: IL Herzliya Pituach
- Agency: D. Kligler I.P. Services Ltd.
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A method for data storage includes storing data in a target analog memory cell, which is one of a group of analog memory cells that are connected in series with one another, by writing an input storage value into the target memory cell. A first read operation, which reads a first output storage value from the target memory cell while biasing the other memory cells with respective first pass voltages, is applied to the target memory cell. A second read operation, which reads a second output storage value from the target memory cell while biasing the other memory cells with respective second pass voltages, is applied to the target memory cell. At least one of the second pass voltages is different from a respective first pass voltage. The data is reconstructed responsively to the first and second output storage values.
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