Invention Grant
- Patent Title: Structures and methods for reading out non-volatile memories
- Patent Title (中): 用于读出非易失性存储器的结构和方法
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Application No.: US12614280Application Date: 2009-11-06
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Publication No.: US07995398B2Publication Date: 2011-08-09
- Inventor: Lee Wang
- Applicant: Lee Wang
- Applicant Address: US CA Diamond Bar
- Assignee: FlashSilicon, Inc.
- Current Assignee: FlashSilicon, Inc.
- Current Assignee Address: US CA Diamond Bar
- Agency: Haynes and Boone, LLP
- Agent Edward C. Kwok
- Main IPC: G11C16/26
- IPC: G11C16/26
Abstract:
Non-differential sense amplifier circuitry for reading out Non-Volatile Memories (NVMs) and its operating methods are disclosed. Such non-differential amplifier circuitry requires exceptionally low power and achieves moderate sensing speed, as compared to a conventional sensing scheme.
Public/Granted literature
- US20110110162A1 STRUCTURES AND METHODS FOR READING OUT NON-VOLATILE MEMORIES Public/Granted day:2011-05-12
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