Invention Grant
- Patent Title: Reducing effects of program disturb in a memory device
- Patent Title (中): 减少存储器件中程序干扰的影响
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Application No.: US12619862Application Date: 2009-11-17
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Publication No.: US07995400B2Publication Date: 2011-08-09
- Inventor: Vishal Sarin
- Applicant: Vishal Sarin
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
The programming disturb effects in a semiconductor non-volatile memory device are reduced by biasing unselected word lines of a memory block with a negative voltage followed by a positive Vpass voltage. The selected word lines are biased with a programming voltage. In one embodiment, the programming voltage is preceded by a negative voltage.
Public/Granted literature
- US20100061147A1 REDUCING EFFECTS OF PROGRAM DISTURB IN A MEMORY DEVICE Public/Granted day:2010-03-11
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