Invention Grant
US07995408B2 Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein
有权
用于在半导体存储器件中提供参考电压的电路，用于测试其中的内部电压发生器
- Patent Title: Circuit for supplying a reference voltage in a semiconductor memory device for testing an internal voltage generator therein
- Patent Title (中): 用于在半导体存储器件中提供参考电压的电路，用于测试其中的内部电压发生器
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Application No.: US12169591Application Date: 2008-07-08
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Publication No.: US07995408B2Publication Date: 2011-08-09
- Inventor: Khil-Ohk Kang
- Applicant: Khil-Ohk Kang
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2007-0114974 20071112
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A reference voltage supplying circuit can include an internal reference voltage generating unit configured to generate an internal reference voltage, a pad configured to receive an external reference voltage, a switching unit selectively configured to supply the internal reference voltage or the external reference voltage to an internal voltage generator in a test mode.
Public/Granted literature
- US20090122634A1 CIRCUIT AND METHOD FOR SUPPLYING A REFERENCE VOLTAGE IN SEMICONDUCTOR MEMORY APPARATUS Public/Granted day:2009-05-14
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