Invention Grant
- Patent Title: Leakage and NBTI reduction technique for memory
- Patent Title (中): 记忆泄漏和NBTI降低技术
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Application No.: US12492364Application Date: 2009-06-26
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Publication No.: US07995410B2Publication Date: 2011-08-09
- Inventor: Brian J. Campbell , Greg M. Hess , Hang Huang
- Applicant: Brian J. Campbell , Greg M. Hess , Hang Huang
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Agent Lawrence J. Merkel
- Main IPC: G11C7/00
- IPC: G11C7/00

Abstract:
In one embodiment, an integrated circuit includes a logic circuit and a memory circuit that includes multiple bit lines and bit line precharge circuits. The memory circuit may include level shifters for control signals generated from logic circuit inputs, and particularly there may be one or more level shifters that generate precharge enable signals to control the bit line precharge circuits. The level shifters for the bit line precharge circuits may also be controlled, during periods of time that the memory circuit is idle, by an input control signal (FloatBL herein). If the FloatBL signal is asserted, the bit line precharge circuits may be disabled to float the bit lines. In some embodiments, the FloatBL signal may also disable bit line bit line hold circuits on the bit lines. In some embodiments, when the memory circuit is exiting an idle state, the bit line precharge circuits may be enabled in a staggered fashion.
Public/Granted literature
- US20100329062A1 Leakage and NBTI Reduction Technique for Memory Public/Granted day:2010-12-30
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