Invention Grant
- Patent Title: Analog-to-digital and digital-to-analog conversion window adjustment based on reference cells in a memory device
- Patent Title (中): 基于存储器件中的参考单元的模数和数模转换窗口调整
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Application No.: US11851649Application Date: 2007-09-07
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Publication No.: US07995412B2Publication Date: 2011-08-09
- Inventor: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- Applicant: Vishal Sarin , Jung-Sheng Hoei , Frankie F. Roohparvar
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Leffert Jay & Polglaze, P.A.
- Main IPC: G11C7/02
- IPC: G11C7/02

Abstract:
An analog-to-digital conversion window is defined by reference voltages stored in reference memory cells of a memory device. A first reference voltage is read to define an upper limit of the conversion window and a second reference voltage is read to define a lower limit of the conversion window. An analog voltage representing a digital bit pattern is read from a memory cell and converted to the digital bit pattern by an analog-to-digital conversion process using the conversion window as the limits for the sampling process. This scheme helps in real time tracking of the ADC window with changes in the program window of the memory array.
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