Invention Grant
- Patent Title: Semiconductor memory device and operation method thereof
- Patent Title (中): 半导体存储器件及其操作方法
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Application No.: US12165065Application Date: 2008-06-30
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Publication No.: US07995416B2Publication Date: 2011-08-09
- Inventor: Sun-Hyuck Yon , Kee-Teok Park
- Applicant: Sun-Hyuck Yon , Kee-Teok Park
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0138018 20071226
- Main IPC: G11C5/14
- IPC: G11C5/14
Abstract:
A semiconductor memory device includes a clock synchronizing unit for receiving a first power voltage through a first power voltage terminal, and an additional power voltage providing unit for additionally providing a second power voltage to the first power voltage terminal for a predetermined period after leaving a power down mode.
Public/Granted literature
- US20090168584A1 SEMICONDUCTOR MEMORY DEVICE AND OPERATION METHOD THEREOF Public/Granted day:2009-07-02
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