Invention Grant
US07995631B2 Solid-state laser with spatially-tailored active ion concentration using valence conversion with surface masking and method
有权
具有空间定制的活性离子浓度的固体激光器,其使用经表面掩蔽和方法的价态转换
- Patent Title: Solid-state laser with spatially-tailored active ion concentration using valence conversion with surface masking and method
- Patent Title (中): 具有空间定制的活性离子浓度的固体激光器,其使用经表面掩蔽和方法的价态转换
-
Application No.: US11404338Application Date: 2006-04-14
-
Publication No.: US07995631B2Publication Date: 2011-08-09
- Inventor: David S. Sumida , Robert W. Byren , Michael Ushinsky
- Applicant: David S. Sumida , Robert W. Byren , Michael Ushinsky
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: H01S3/16
- IPC: H01S3/16

Abstract:
A material having a surface and a dopant in the material distributed whereby the material has a spatially variant optical flux density profile. In accordance with the invention, tailored non-uniform gain profiles within a Yb:YAG laser component (rod, slab, disc, etc.) are achieved by a spatial material modification in the spatially masked pre-forms. High temperature-assisted reduction leads to the coordinate-dependent gain profiles, which are controlled by the topology of the deposited solid masks. The gain profiles are obtained by reducing the charge state of the laser-active trivalent Yb3+ ions into inactive divalent Yb2+ ions. This valence conversion process is driven by mass transport of ions and oxygen vacancies. These processes, in turn, affect the dopant distribution throughout the surface and bulk laser crystal.
Public/Granted literature
Information query