Invention Grant
US07995633B2 Method for producing a semiconductor laser, and semiconductor laser
有权
半导体激光器的制造方法以及半导体激光器
- Patent Title: Method for producing a semiconductor laser, and semiconductor laser
- Patent Title (中): 半导体激光器的制造方法以及半导体激光器
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Application No.: US12371292Application Date: 2009-02-13
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Publication No.: US07995633B2Publication Date: 2011-08-09
- Inventor: Juergen Dachs , Stefan Illek , Roland Schulz , Thomas Schwarz , Frank Singer , Heiko Unold
- Applicant: Juergen Dachs , Stefan Illek , Roland Schulz , Thomas Schwarz , Frank Singer , Heiko Unold
- Applicant Address: DE Regensburg
- Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee: OSRAM Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102008009108 20080214
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01L21/00

Abstract:
A method for producing a multiplicity of semiconductor lasers (100) comprising the steps of providing a carrier wafer (30), producing an assembly (70) by applying a multiplicity of semiconductor laser chips (4) to a top side (31) of the carrier wafer (30), and singulating the assembly (70) to form a multiplicity of semiconductor lasers (100). Each semiconductor laser (100) comprises a mounting block (3) and at least one semiconductor laser chip (4). Each mounting block (3) has a mounting area (13) which runs substantially perpendicular to a top side (12) of the mounting block (3), on which top side the semiconductor laser chip (4) is arranged. The mounting area (13) is produced during the singulation of the assembly.
Public/Granted literature
- US20090232177A1 Method for Producing a Semiconductor Laser, and Semiconductor Laser Public/Granted day:2009-09-17
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