Invention Grant
- Patent Title: Semiconductor laser
- Patent Title (中): 半导体激光器
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Application No.: US12726659Application Date: 2010-03-18
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Publication No.: US07995635B2Publication Date: 2011-08-09
- Inventor: Chie Fukuda
- Applicant: Chie Fukuda
- Applicant Address: JP Osaka
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2009-091403 20090403
- Main IPC: H01S3/10
- IPC: H01S3/10 ; H01S5/00 ; H01S3/08

Abstract:
A wavelength tunable laser according to the present invention includes a first facet and a second facet opposite the first facet, a reflective region provided adjacent to the second facet, and a gain region provided between the first facet and the reflective region. The reflective region has a plurality of reflection peak wavelengths that periodically vary at a predetermined wavelength interval. The first facet and the reflective region constitute a laser cavity. Furthermore, the gain region includes an active layer where light is generated, a diffraction grating layer having a diffraction grating whose grating pitch varies in a light propagation direction, a refractive-index control layer provided between the active layer and the diffraction grating layer, a first electrode for injecting current into the active layer, and a plurality of second electrodes arranged in the light propagation direction to inject current into the refractive-index control layer.
Public/Granted literature
- US20100254422A1 SEMICONDUCTOR LASER Public/Granted day:2010-10-07
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