Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12244908Application Date: 2008-10-03
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Publication No.: US07995984B2Publication Date: 2011-08-09
- Inventor: Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
- Applicant: Tomoaki Kudaishi , Satoshi Sakurai , Takayuki Tsutsui , Masashi Yamaura , Reiichi Arai , Takayuki Maehara
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Mattingly & Malur, PC
- Priority: JP2007-301138 20071121
- Main IPC: H04B1/28
- IPC: H04B1/28

Abstract:
The present invention aims to reduce an exclusively-possessed area of each of bonding wires mounted over a wiring board, for coupling a power amplifying unit of a semiconductor chip and an antenna switch of a second semiconductor chip in a semiconductor device that configures an RF module. In the RF module, the first semiconductor chip and the second semiconductor chip are mounted side by side in a central area of the wiring board. The first semiconductor chip is formed with amplifier circuits and a control circuit and comprises a silicon substrate or a compound semiconductor substrate. On the other hand, the second semiconductor chip is formed with an antenna switch and comprises the silicon substrate or compound semiconductor substrate. Pads of the first semiconductor chip and pads of the second semiconductor chip are respectively electrically coupled to one another. This coupling is carried out by the bonding wires formed in the surface of the wiring board and the bonding wires formed inside the wiring board.
Public/Granted literature
- US20090130996A1 SEMICONDUCTOR DEVICE Public/Granted day:2009-05-21
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