中科微点-全球专利检索

  1. Login
  2. Sign Up
Invention Grant
US07996202B2 Method of modeling and producing an integrated circuit including at least one transistor and corresponding integrated circuit 有权
包括至少一个晶体管和相应的集成电路的集成电路的建模和制造方法

Method of modeling and producing an integrated circuit including at least one transistor and corresponding integrated circuit
Abstract:
A system is provided for modeling an integrated circuit including at least one insulated-gate field-effect transistor. The system includes generator means for defining a parameter representing mechanical stresses applied to the active area of the transistor, and processing means for determining at least one of the electrical parameters of the transistor based at least partially on the stress parameter. Also provided is a method of modeling an integrated circuit including at least one insulated-gate field-effect transistor, and a method of producing an integrated circuit including at least one insulated-gate field-effect transistor.
Abstract(Chinese):

提供了一种用于对包括至少一个绝缘栅场效应晶体管的集成电路进行建模的系统。 该系统包括用于定义表示施加到晶体管的有源区域的机械应力的参数的发生器单元，以及用于至少部分地基于应力参数来确定晶体管的至少一个电参数的处理单元。 还提供了一种对包括至少一个绝缘栅场效应晶体管的集成电路进行建模的方法，以及一种制造包括至少一个绝缘栅场效应晶体管的集成电路的方法。

Public/Granted literature
Information query
Espacenet
Patent Agency Ranking
0/0