Invention Grant
US07996590B2 Semiconductor memory module and semiconductor memory system having termination resistor units
有权
具有终端电阻器单元的半导体存储器模块和半导体存储器系统
- Patent Title: Semiconductor memory module and semiconductor memory system having termination resistor units
- Patent Title (中): 具有终端电阻器单元的半导体存储器模块和半导体存储器系统
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Application No.: US12539840Application Date: 2009-08-12
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Publication No.: US07996590B2Publication Date: 2011-08-09
- Inventor: Jung-bae Lee
- Applicant: Jung-bae Lee
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2009-0044135 20090520
- Main IPC: G06F13/00
- IPC: G06F13/00 ; H03K17/16 ; H03K19/003

Abstract:
A semiconductor memory module includes a memory module board having at least one semiconductor memory device. The semiconductor memory device includes a data input buffer that receives data and a first reference voltage via first and second input terminals, a command/address buffer that receives a command/address signal and a second reference voltage via first and second input terminals, and a first termination resistor unit connected to the first input terminal of the data input buffer. The semiconductor memory module further includes a second termination resistor unit located on the memory module board and connected to an internal command/address bus. The first termination resistor unit includes a first resistor connected between a first voltage source and the first input terminal of the data input buffer, and the second termination resistor unit includes a second resistor connected between a second voltage source and the first input terminal of the command/address input buffer.
Public/Granted literature
- US20090303802A1 SEMICONDUCTOR MEMORY MODULE AND SEMICONDUCTOR MEMORY SYSTEM HAVING TERMINATION RESISTOR UNITS Public/Granted day:2009-12-10
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