Invention Grant
US07996601B2 Apparatus and method of partially accessing dynamic random access memory
有权
部分访问动态随机存取存储器的装置和方法
- Patent Title: Apparatus and method of partially accessing dynamic random access memory
- Patent Title (中): 部分访问动态随机存取存储器的装置和方法
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Application No.: US11783516Application Date: 2007-04-10
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Publication No.: US07996601B2Publication Date: 2011-08-09
- Inventor: Sang-jun Yang , Jong-chul Shin
- Applicant: Sang-jun Yang , Jong-chul Shin
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2006-0117910 20061127
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
Provided are an apparatus and method for partially accessing a DRAM. The apparatus for partially accessing a DRAM includes a memory controller. The memory controller includes a first sub-controller which controls a first DRAM and a second sub-controller which controls a second DRAM. Accordingly, a garbage cycle, i.e., an operation which wastes data transfer bandwidth, that may generate when a related art DRAM accessing apparatus is used, is removed.
Public/Granted literature
- US20080126691A1 Apparatus and method of partially accessing dynamic random access memory Public/Granted day:2008-05-29
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