Invention Grant
- Patent Title: Parallel memory device rank selection
- Patent Title (中): 并行存储设备等级选择
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Application No.: US11796903Application Date: 2007-04-30
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Publication No.: US07996602B1Publication Date: 2011-08-09
- Inventor: Lidia Warnes , Teddy Lee , Ricardo Ernesto Espinoza-Ibarra , Dennis Carr , Michael Bozich Calhoun
- Applicant: Lidia Warnes , Teddy Lee , Ricardo Ernesto Espinoza-Ibarra , Dennis Carr , Michael Bozich Calhoun
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G06F12/06
- IPC: G06F12/06
Abstract:
A translator of an apparatus in an example selects one or more ranks of parallel memory devices from a plurality of available ranks of parallel memory devices in a plurality of double data rate registered and/or unbuffered dual in-line memory modules (DDR registered and/or unbuffered DIMMs) through employment of a native fully buffered dual in-line memory module protocol (native FB-DIMM protocol).
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