Invention Grant
- Patent Title: Circuits and methods for sleep state leakage current reduction
- Patent Title (中): 休眠状态漏电流的电路和方法降低
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Application No.: US12032059Application Date: 2008-02-15
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Publication No.: US07996695B2Publication Date: 2011-08-09
- Inventor: Martin Saint-Laurent , Jentsung Lin
- Applicant: Martin Saint-Laurent , Jentsung Lin
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agent Peter M. Kamarchik; Nicholas J. Pauley; Jonathan Velasco
- Main IPC: G06F1/00
- IPC: G06F1/00
Abstract:
A circuit for reducing sleep state current leakage is described. The circuit includes a hardware unit selected from at least one of a latch, a flip-flop, a comparator, a multiplexer, or an adder. The hardware unit includes a first node. The hardware unit further includes a sleep enabled combinational logic coupled to the first node, wherein a value of the first node is preserved during a sleep state.
Public/Granted literature
- US20090210728A1 Circuits and Methods for Sleep State Leakage Current Reduction Public/Granted day:2009-08-20
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