A method for monitoring the status of a memory device is disclosed. The method includes, during operation of the memory device, exercising a first portion of the memory device more than at least one other portion of the memory device in order to induce an accelerated rate of aging of the first portion. The first portion is monitored to detect at least a potential for a failure in the first portion. According to the method, in response to monitoring the first portion, at least one corrective action is performed. Apparatus and computer readable media are also disclosed.