Invention Grant
- Patent Title: Error correction for memory
- Patent Title (中): 内存误差校正
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Application No.: US12823716Application Date: 2010-06-25
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Publication No.: US07996727B2Publication Date: 2011-08-09
- Inventor: William Henry Radke
- Applicant: William Henry Radke
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: G06F11/00
- IPC: G06F11/00
Abstract:
Methods and devices operate to apply and provide differing levels of error correction within a multi-level, non-volatile memory. In an example, the differing level of error correction is provided within one page of a row of multi-level cells relative to other pages stored within the same row of multi-level cells.
Public/Granted literature
- US20100262890A1 ERROR CORRECTION FOR MEMORY Public/Granted day:2010-10-14
Information query
