Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US12469778Application Date: 2009-05-21
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Publication No.: US07996735B2Publication Date: 2011-08-09
- Inventor: Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- Applicant: Motoyasu Terao , Satoru Hanzawa , Hitoshi Kume , Minoru Ogushi , Yoshitaka Sasago , Masaharu Kinoshita , Norikatsu Takaura
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Miles & Stockbridge P.C.
- Priority: JP2008-220785 20080829
- Main IPC: G11C29/00
- IPC: G11C29/00

Abstract:
To realize a fast and highly reliable phase-change memory system of low power consumption, a semiconductor device includes: a memory device which includes a first memory array having a first area including a plurality of first memory cells and a second area including a plurality of second memory cells; a controller coupled to the memory device to issue a command to the memory device; and a condition table for storing a plurality of trial writing conditions. The controller performs trial writing in the plurality of second memory cells a plurality of times based on the plurality of trial writing conditions stored in the condition table, and determines writing conditions in the plurality of first memory cells based on a result of the trial writing. The memory device performs writing in the plurality of first memory cells based on the writing conditions instructed from the controller.
Public/Granted literature
- US20100058127A1 SEMICONDUCTOR DEVICE Public/Granted day:2010-03-04
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