Invention Grant
- Patent Title: Bad page marking strategy for fast readout in memory
- Patent Title (中): 内存中快速读取的不良页面标记策略
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Application No.: US12400091Application Date: 2009-03-09
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Publication No.: US07996736B2Publication Date: 2011-08-09
- Inventor: Aldo Bottelli , Luca Fasoli
- Applicant: Aldo Bottelli , Luca Fasoli
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C29/00
- IPC: G11C29/00 ; G06F13/00 ; G06F9/26

Abstract:
A technique for identifying bad pages of storage elements in a memory device. A flag byte is provided for each page group of one or more pages which indicates whether the page group is healthy. Flag bytes of selected page groups also indicate whether larger sets of page groups are healthy, according to bit positions in the flag bytes. A bad page identification process includes reading the flag bytes with a selected granularity so that not all flag bytes are read. Optionally, a drill down process reads flag bytes for smaller sets of page groups when a larger set of page groups is identified as having at least one bad page. This allows the bad page groups to be identified and marked with greater specificity. Redundant copies of flag bytes may be stored in different locations of the memory device. A majority vote process assigns a value to each bit.
Public/Granted literature
- US20100107022A1 BAD PAGE MARKING STRATEGY FOR FAST READOUT IN MEMORY Public/Granted day:2010-04-29
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