Invention Grant
- Patent Title: Process for fabricating piezoelectric element
- Patent Title (中): 压电元件制造工艺
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Application No.: US11813551Application Date: 2006-02-15
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Publication No.: US08006357B2Publication Date: 2011-08-30
- Inventor: Yuki Nakamura , Yuji Murashima , Masahiro Yasumi , Kazuki Komaki
- Applicant: Yuki Nakamura , Yuji Murashima , Masahiro Yasumi , Kazuki Komaki
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: RatnerPrestia
- Priority: JP2005-046749 20050223
- International Application: PCT/JP2006/302619 WO 20060215
- International Announcement: WO2006/090618 WO 20060831
- Main IPC: H01L41/22
- IPC: H01L41/22 ; H04R17/00 ; B21D53/76 ; B23P17/00

Abstract:
In a production method of a piezoelectric element, an unneeded electric field is prevented from being applied to a piezoelectric thin film layer during the production process, resulting in a high performance piezoelectric element production method. The production method includes a first process for depositing an under electrode layer, a piezoelectric thin film layer and an upper electrode layer successively on a substrate such that the under electrode layer and the upper electrode layer form a short-circuit, a second process, after the first process, for etching including dry etching, the second process commenced while the under electrode layer and the upper electrode layer are short-circuited, a third process, after the second process, for polarizing by applying a voltage across the under electrode layer and the upper electrode layer, a fourth process, after the third process, for individualizing each piezoelectric element.
Public/Granted literature
- US20100125988A1 PROCESS FOR FABRICATING PIEZOELECTRIC ELEMENT Public/Granted day:2010-05-27
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