Invention Grant
- Patent Title: Pressure sensor grid
- Patent Title (中): 压力传感器网格
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Application No.: US12433775Application Date: 2009-04-30
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Publication No.: US08006565B2Publication Date: 2011-08-30
- Inventor: Wel Wu , Shih-Yuan (S Y) Wang , Pratik Chaturvedi , Sagl Varghese Mathal
- Applicant: Wel Wu , Shih-Yuan (S Y) Wang , Pratik Chaturvedi , Sagl Varghese Mathal
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- Main IPC: G01L9/00
- IPC: G01L9/00

Abstract:
A pressure sensor grid can comprise a plurality of bottom wires, arranged substantially parallel to each other and overlaid by a plurality of top wires arranged substantially perpendicular to the bottom wires. Each intersection of the top and bottom wires includes a pressure sensor. The sensor comprises a switching junction situated between the bottom wire and the top wire and a conducting channel extending through the switching junction from the bottom wire to the top wire. Pressure applied to the top wire causes an increase in conductance between the bottom wire and the top wire.
Public/Granted literature
- US20100275697A1 PRESSURE SENSOR GRID Public/Granted day:2010-11-04
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