Invention Grant
- Patent Title: Integrated electronic sensor
- Patent Title (中): 集成电子传感器
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Application No.: US11992470Application Date: 2006-10-02
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Publication No.: US08007167B2Publication Date: 2011-08-30
- Inventor: Timothy Cummins
- Applicant: Timothy Cummins
- Applicant Address: US TX Austin
- Assignee: Silicon Laboratories Inc.
- Current Assignee: Silicon Laboratories Inc.
- Current Assignee Address: US TX Austin
- Agency: O'Keefe, Egan, Peterman & Ender LLP
- International Application: PCT/IE2006/000107 WO 20061002
- International Announcement: WO2007/036922 WO 20070405
- Main IPC: G01K7/01
- IPC: G01K7/01 ; G01N25/26 ; G01N25/66 ; H01L29/02

Abstract:
A single chip wireless sensor (1) comprises a microcontroller (2) connected to a transmit/receive interface (3), which is coupled to a wireless antenna (4) by an L-C matching circuit. The sensor (1) senses gas or humidity and temperature. The device (1) is an integrated chip manufactured in a single process in which both the electronics and sensor components are manufactured using standard CMOS processing techniques, applied to achieve both electronic and sensing components in an integrated process. A Low-K material (57) with an organic polymer component is spun onto the wafer to form a top layer incorporating also sensing electrodes (60). This material is cured at 300° C., which is much lower than CVD temperatures. The polyimide when cured becomes thermoset, and the lower mass-to-volume ratio resulting in K, its dielectric constant, reducing to 2.9. The thermoset dielectric, while not regarded as porous in the conventional sense, has sufficient free space volume to admit enough gas or humidity for sensing.
Public/Granted literature
- US20090141767A1 Integrated Electronic Sensor Public/Granted day:2009-06-04
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