Invention Grant
- Patent Title: Oxynitride fluorescent material and light-emitting device
- Patent Title (中): 氧氮化物荧光材料和发光装置
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Application No.: US12078822Application Date: 2008-04-07
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Publication No.: US08007684B2Publication Date: 2011-08-30
- Inventor: Naoto Hirosaki
- Applicant: Naoto Hirosaki
- Applicant Address: JP Tsukuba-Shi, Ibaraki
- Assignee: National Institute For Materials Science
- Current Assignee: National Institute For Materials Science
- Current Assignee Address: JP Tsukuba-Shi, Ibaraki
- Agent Manabu Kanesaka
- Priority: JP2003-208409 20030822
- Main IPC: C09K11/74
- IPC: C09K11/74

Abstract:
The invention has for its object the provision of an oxynitride fluorescent material has higher emission luminance than conventional rare earth element-activated sialon fluorescent materials.To this end, an oxynitride fluorescent material is designed in such a way as comprising a JEM phase as a mother crystal and a luminescence center element M1. For instance, the luminescence center element M1 is at least one kind of an element selected from Ce, Pr, Nd, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb, and Lu. And the JEM phase is expressed as a general formula MA1(Si6-zAlz) N10-zOz (where M indicates a metal element, 0.1≦z≦3).
Public/Granted literature
- US20080265748A1 Oxynitride fluorescent material and light-emitting device Public/Granted day:2008-10-30
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