Invention Grant
US08007694B2 P-type metal oxide semiconductor material and fabrication method thereof
有权
P型金属氧化物半导体材料及其制造方法
- Patent Title: P-type metal oxide semiconductor material and fabrication method thereof
- Patent Title (中): P型金属氧化物半导体材料及其制造方法
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Application No.: US12431408Application Date: 2009-04-28
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Publication No.: US08007694B2Publication Date: 2011-08-30
- Inventor: Kuo-Chuang Chiu , Yi-Wen Kao , Shan-Haw Chiou
- Applicant: Kuo-Chuang Chiu , Yi-Wen Kao , Shan-Haw Chiou
- Applicant Address: TW
- Assignee: Industrial Technology Research Institute
- Current Assignee: Industrial Technology Research Institute
- Current Assignee Address: TW
- Agency: Lowe Hauptman Ham & Berner, LLP
- Priority: TW97148889A 20081216
- Main IPC: H01B1/08
- IPC: H01B1/08 ; H01B1/12
Abstract:
A fabrication method for a p-type metal oxide semiconductor material is disclosed, including providing a lithium salt and a zinc salt to be mixed in a solution, wherein to the solution is added a chelating agent to form a metal complex compound comprising lithium and zinc. A heating process for the metal complex compound to form a p-type metal oxide semiconductor material powder is performed, having a formula LixZnx-1 O.
Public/Granted literature
- US20100148133A1 P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND FABRICATION METHOD THEREOF Public/Granted day:2010-06-17
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