Invention Grant
- Patent Title: Multiple technology node mask
- Patent Title (中): 多技术节点掩码
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Application No.: US13007048Application Date: 2011-01-14
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Publication No.: US08007966B2Publication Date: 2011-08-30
- Inventor: Feng Lung Lin , Kuan Liang Wu , Fei-Gwo Tsai , Che-Rong Liang
- Applicant: Feng Lung Lin , Kuan Liang Wu , Fei-Gwo Tsai , Che-Rong Liang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: G03F1/00
- IPC: G03F1/00 ; G03F7/00
Abstract:
A method of fabricating a mask set is provided. The method includes providing mask data associated with a plurality of mask layers. The mask data includes a first pattern associated with a first technology node and a second pattern associated with a second technology node. The method continues with determining to form a multi-technology node mask (MTM) for a first mask layer of the plurality of mask layers. The MTM for the first mask layer is formed, which includes features associated with the first pattern and features associated with the second pattern.
Public/Granted literature
- US20110113389A1 MULTIPLE TECHNOLOGY NODE MASK Public/Granted day:2011-05-12
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