Invention Grant
- Patent Title: Method for manufacturing semiconductor device including hat-shaped electrode
- Patent Title (中): 包括帽形栅电极的半导体器件的制造方法
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Application No.: US11256086Application Date: 2005-10-24
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Publication No.: US08008140B2Publication Date: 2011-08-30
- Inventor: Mayumi Yamaguchi , Atsuo Isobe , Satoru Saito
- Applicant: Mayumi Yamaguchi , Atsuo Isobe , Satoru Saito
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2004-321009 20041104
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
It is an object of the present invention to manufacture a TFT having a small-sized LDD region in a process with a few processing step and to manufacture TFTs each having a structure depending on each circuit separately. According to the present invention, a gate electrode is a multilayer, and a hat-shaped gate electrode is formed by having the longer gate length of a lower-layer gate electrode than that of an upper-layer gate electrode. At this time, only the upper-layer gate electrode is etched by using a resist recess width to form the hat-shaped gate electrode. Accordingly, an LDD region can be formed also in a fine TFT; thus, TFTs having a structure depending on each circuit can be manufactured separately.
Public/Granted literature
- US20060091398A1 Semiconductor device and method for manufacturing the same Public/Granted day:2006-05-04
Information query
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