Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11727981Application Date: 2007-03-29
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Publication No.: US08008152B2Publication Date: 2011-08-30
- Inventor: Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
- Applicant: Ryota Fujitsuka , Katsuaki Natori , Daisuke Nishida , Masayuki Tanaka , Katsuyuki Sekine , Yoshio Ozawa , Akihito Yamamoto
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2006-112193 20060414
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of manufacturing a semiconductor device comprising a first insulating film formed on a semiconductor substrate, a charge storage layer formed on the first insulating film, a second insulating film formed on the charge storage layer, and a control electrode formed on the second insulating film, forming the second insulating film comprises forming a lower insulating film containing oxygen and a metal element, thermally treating the lower insulating film in an atmosphere containing oxidizing gas, and forming an upper insulating film on the thermally treated lower insulating film using film forming gas containing at least one of hydrogen and chlorine.
Public/Granted literature
- US20080014745A1 Method of manufacturing semiconductor device Public/Granted day:2008-01-17
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