Invention Grant
- Patent Title: CMOS device with raised source and drain regions
- Patent Title (中): CMOS器件具有升高的源极和漏极区域
-
Application No.: US11588920Application Date: 2006-10-27
-
Publication No.: US08008157B2Publication Date: 2011-08-30
- Inventor: Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- Applicant: Chun-Sheng Liang , Hung-Ming Chen , Chien-Chao Huang , Fu-Liang Yang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L21/8238
- IPC: H01L21/8238
Abstract:
A method of forming a semiconductor structure includes forming a PMOS device and an NMOS device. The step of forming the PMOS device includes forming a first gate stack on a semiconductor substrate; forming a first offset spacer on a sidewall of the first gate stack; forming a stressor in the semiconductor substrate using the first offset spacer as a mask; and epitaxially growing a first raised source/drain extension (LDD) region on the stressor. The step of forming the NMOS device includes forming a second gate stack on the semiconductor substrate; forming a second offset spacer on a sidewall of the second gate stack; epitaxially growing a second raised LDD region on the semiconductor substrate using the second offset spacer as a mask; and forming a deep source/drain region adjoining the second raised LDD region.
Public/Granted literature
- US20080102573A1 CMOS device with raised source and drain regions Public/Granted day:2008-05-01
Information query
IPC分类:
