Invention Grant
- Patent Title: Dopant implantation method using multi-step implants
- Patent Title (中): 使用多步植入物的掺杂剂植入法
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Application No.: US12170656Application Date: 2008-07-10
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Publication No.: US08008158B2Publication Date: 2011-08-30
- Inventor: Tse-En Chang , Chih-Fu Chang , Bone-Fong Wu , Chieh Chih Ting , Shao Hua Wang , Pu-Fang Chen , Yen Chuang
- Applicant: Tse-En Chang , Chih-Fu Chang , Bone-Fong Wu , Chieh Chih Ting , Shao Hua Wang , Pu-Fang Chen , Yen Chuang
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Duane Morris LLP
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L21/8236
Abstract:
A method of forming a dopant implant region in a MOS transistor device having a dopant profile having a target dopant concentration includes implanting a first concentration of dopants into a region of a substrate, where the first concentration of dopants is less than the target dopant concentration, and without annealing the substrate after the implanting step, performing at least one second implanting step to implant at least one second concentration of dopants into the region of the substrate to bring the dopant concentration in the region to the target dopant concentration.
Public/Granted literature
- US20100009506A1 DOPANT IMPLANTATION METHOD AND INTEGRATED CIRCUITS FORMED THEREBY Public/Granted day:2010-01-14
Information query
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