Method of manufacturing semiconductor device

Invention Grant

US08008190B2 Method of manufacturing semiconductor device 失效

Title translation: 制造半导体器件的方法

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Patent Title: Method of manufacturing semiconductor device
Patent Title (中): 制造半导体器件的方法
Application No.: US12142858

Application Date: 2008-06-20
Publication No.: US08008190B2

Publication Date: 2011-08-30
Inventor: Nobuhide Yamada , Hideto Matsuyama , Hideshi Miyajima
Applicant: Nobuhide Yamada , Hideto Matsuyama , Hideshi Miyajima
Applicant Address: JP Tokyo
Assignee: Kabushiki Kaisha Toshiba
Current Assignee: Kabushiki Kaisha Toshiba
Current Assignee Address: JP Tokyo
Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
Priority: JP2007-163686 20070621
Main IPC: H01L21/4763
IPC: H01L21/4763

Method of manufacturing semiconductor device

Abstract:

Disclosed is a method of manufacturing a semiconductor device which includes: providing an insulating film formed above a semiconductor substrate with a processed portion; supplying a surface of the processed portion of the insulating film with a primary reactant from a reaction of a raw material including at least a Si-containing compound; and subjecting the primary reactant to dehydration condensation to form a silicon oxide film on the surface of the processed portion.

Abstract(Chinese):

公开了一种制造半导体器件的方法，其包括：在半导体衬底上形成有加工部分的绝缘膜; 从包含至少含Si化合物的原料的反应，向绝缘膜的加工部分的表面供给初级反应物; 并使初级反应物进行脱水缩合以在处理部分的表面上形成氧化硅膜。

Public/Granted literature

US20080318408A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2008-12-25

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/46	....用H01L21/36至H01L21/428各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/44）
H01L21/461	.....改变半导体材料的表面物理特性或形状的，例如腐蚀、抛光、切割
H01L21/4763	......非绝缘层的沉积，例如绝缘层上的导电层、电阻层；这些层的后处理（电极的制造入H01L21/28）