Methods for producing a semiconductor device having planarization films

Invention Grant

US08008205B2 Methods for producing a semiconductor device having planarization films 有权

Title translation: 具有平坦化膜的半导体器件的制造方法

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Patent Title: Methods for producing a semiconductor device having planarization films
Patent Title (中): 具有平坦化膜的半导体器件的制造方法
Application No.: US12159582

Application Date: 2006-10-13
Publication No.: US08008205B2

Publication Date: 2011-08-30
Inventor: Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
Applicant: Yasumori Fukushima , Yutaka Takafuji , Michiko Takei , Kazuhide Tomiyasu
Applicant Address: JP Osaka-Shi Osaka
Assignee: Sharp Kabushiki Kaisha
Current Assignee: Sharp Kabushiki Kaisha
Current Assignee Address: JP Osaka-Shi Osaka
Agency: Nixon & Vanderhye P.C.
International Application: PCT/JP2006/320492 WO 20061013
International Announcement: WO2007/102248 WO 20070913
Main IPC: H01L21/311
IPC: H01L21/311

Methods for producing a semiconductor device having planarization films

Abstract:

A method of the present invention includes a first planarization film formation step of forming, in at least part of a flat portion of the second regions, a first planarization film so as to have a uniform thickness; a second planarization film formation step of forming a second planarization film between the first planarization films to be coplanar with a surface of the first planarization film; a peeling layer formation step of forming a peeling layer by ion implantation of a peeling material into the base layer via the first planarization film or the second planarization film; and a separation step of separating part of the base layer along the peeling layer.

Abstract(Chinese):

本发明的方法包括：第一平坦化膜形成步骤，在第二区域的平坦部分的至少一部分中形成具有均匀厚度的第一平坦化膜; 第二平坦化膜形成步骤，在所述第一平坦化膜之间形成与所述第一平坦化膜的表面共面的第二平坦化膜; 剥离层形成步骤，通过经由第一平坦化膜或第二平坦化膜将剥离材料离子注入基底层来形成剥离层; 以及分离步骤，用于沿着剥离层分离基底层的一部分。

Public/Granted literature

US20100148261A1 SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING THE SAME Public/Granted day:2010-06-17

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/18	...器件有由周期表Ⅳ族元素或含有/不含有杂质的AⅢBⅤ族化合物构成的半导体，如掺杂材料
H01L21/30	....用H01L21/20至H01L21/26各组不包含的方法或设备处理半导体材料的（在半导体材料上制作电极的入H01L21/28）
H01L21/31	.....在半导体材料上形成绝缘层的，例如用于掩膜的或应用光刻技术的（密封层入H01L21/56）；以及这些层的后处理；这些层的材料的选择
H01L21/3105	......后处理
H01L21/311	.......绝缘层的刻蚀