Invention Grant
US08008210B2 Exposure mask with double patterning technology and method for fabricating semiconductor device using the same
失效
具有双重图案化技术的曝光掩模和使用其的制造半导体器件的方法
- Patent Title: Exposure mask with double patterning technology and method for fabricating semiconductor device using the same
- Patent Title (中): 具有双重图案化技术的曝光掩模和使用其的制造半导体器件的方法
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Application No.: US12000059Application Date: 2007-12-07
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Publication No.: US08008210B2Publication Date: 2011-08-30
- Inventor: Seo Min Kim
- Applicant: Seo Min Kim
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: IP & T Group LLP
- Priority: KR10-2007-0065280 20070629
- Main IPC: H01L21/302
- IPC: H01L21/302 ; C03C15/00
Abstract:
An exposure mask for forming a G-type active region with a double patterning technology includes a bar shaped first light-blocking pattern to define an I-type active region, and an island shaped second light-blocking pattern to define a bit line contact region. The first light-blocking pattern and the second light-blocking pattern are arranged alternately.
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